| PART |
Description |
Maker |
| IXFH20N60 IXFM20N60 IXFH15N60 IXFM15N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?.35惟??娌??澧?己??HiPerFET???MOSFET)
|
IXYS[IXYS Corporation]
|
| STS4DNF60L 6121 STS4DNF60 |
N-Channel 60V-0.045Ω-4A SO-8 STripFET Power MOSFET(N沟道功率MOSFET) N沟道60V的，0.045Ω- 4A条的SO - 8 STripFET功率MOSFET（不适用沟道功率MOSFET的）
N - CHANNEL 60V - 0.045 - 4A SO-8 STripFET TM POWER MOSFET
N-CHANNEL POWER MOSFET
From old datasheet system
N - CHANNEL 60V - 0.045ohm - 4A SO-8 STripFET POWER MOSFET
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ
N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
|
Fairchild Semiconductor, Corp.
|
| IRFZ44E IRFZ44EPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)
|
IRF[International Rectifier]
|
| IXFT88N30P IXFK88N30P IXFH88N30P |
Polar HiPerFET Power MOSFET
88 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Polar HiPerFET Power MOSFET
|
IXYS Corporation
|
| IXFH80N20Q IXFK80N20Q IXFT80N20Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
TRANSISTOR|MOSFET|N-CHANNEL|200VV(BR)DSS|80AI(D)|TO-247AD
HiPerFET Power MOSFETs Q-Class
|
IXYS[IXYS Corporation]
|
| IXFH9N80Q IXFT9N80Q |
HiPerFET Power MOSFETs Q-Class 9 A, 800 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
ETC[ETC]
|
| IRFD9024 |
-60V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-1.6A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-1.6A)
|
IRF[International Rectifier]
|
| IRFR9014 IRFU9014 IRFR9014TRL |
HEXFET Power MOSFET HEXFET功率MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D-Pak package
-60V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-60V Rds(on)=0.50ohm Id=-5.1A)
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 5.1A
|
IRF[International Rectifier]
Samsung semiconductor
International Rectifier, Corp.
|
| HUF76423S3S HUF76423P3 FN4708 HUF76423S3ST HUF7642 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 36A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 36A条（丁）|63AB
N-Channel NexFET Power MOSFET 8-SON -55 to 150
33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
